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this is information on a product in full production. february 2014 docid025268 rev 2 1/17 17 STGW28IH125DF stgwt28ih125df 1250 v, 30 a ih series trench gate field-stop igbt datasheet - production data figure 1. internal schematic diagram features ? designed for soft commutation only ? maximum junction temperature: t j = 175 c ? minimized tail current ? v ce(sat) = 2.0 v (typ.) @ i c = 25 a ? tight parameters distribution ? safe paralleling ? low v f soft recovery co-packaged diode ? low thermal resistance ? lead free package applications ? induction heating ? microwave oven ? resonant converters description these igbts are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. a freewheeling diode with a low drop forward voltage is co-packaged. the result is a product specifically designed to maximize efficiency for any resonant and soft-switching application. to-247 to-3p 1 2 3 1 2 3 tab c (2, tab) e (3) g (1) table 1. device summary order code marking package packaging STGW28IH125DF g28ih125df to-247 tube stgwt28ih125df g28ih125df to-3p tube www.st.com
contents STGW28IH125DF, stgwt28ih125df 2/17 docid025268 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid025268 rev 2 3/17 STGW28IH125DF, stgwt28ih125df electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 1250 v i c continuous collector current at t c = 25 c 60 a i c continuous collector current at t c = 100 c 30 a i cp (1) 1. pulse width limited by ma ximum junction temperature. pulsed collector current 120 a v ge gate-emitter voltage 20 v i f continuous forward current at t c = 25 c 60 a i f continuous forward current at t c = 100 c 30 a i fp(1) pulsed forward current 120 a p tot total dissipation at t c = 25 c 375 w t stg storage temperature range - 55 to 150 c t j operating junction temperature - 55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.4 c/w r thjc thermal resistance junction-case diode 1.47 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics STGW28IH125DF, stgwt28ih125df 4/17 docid025268 rev 2 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 1250 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 25 a 2 2.5 v v ge = 15 v, i c = 25 a t j = 125 c 2.2 v ge = 15 v, i c = 25 a t j = 175 c 2.3 v ge = 15 v, i c = 50 a 2.65 v f forward on-voltage i f = 25 a 1.2 1.6 v i f = 50 a 1.45 i f = 25 a t j = 125 c 1.2 i f = 25 a t j = 175 c 1.2 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 1250 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -2035- pf c oes output capacitance - 139 - pf c res reverse transfer capacitance -52-pf q g total gate charge v cc = 960 v, i c = 25 a, v ge = 15 v, see figure 25 -114-nc q ge gate-emitter charge - 11 - nc q gc gate-collector charge - 69 - nc
docid025268 rev 2 5/17 STGW28IH125DF, stgwt28ih125df electrical characteristics table 6. igbt switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(off) turn-off delay time v ce = 600 v, i c = 25 a, r g = 10 , v ge = 15 v, see figure 23 -128- ns t f current fall time - 82 - ns e off (1) 1. turn-off losses include also the tail of the collector current. turn-off switching losses - 0.72 - mj t d(off) turn-off delay time v ce = 600 v, i c = 25 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 23 -132- ns t f current fall time - 190 - ns e off (1) turn-off switching losses - 1.53 - mj table 7. igbt switching characteristics (capacitive load) symbol parameter test conditions min. typ. max. unit e off (1) 1. turn-off losses include also the tail of the collector current. turn-off switching losses v cc = 900 v, r g = 10 , i c = 50 a, l = 500 h, c snub = 330 nf, see figure 24 -230- j v cc = 900 v, r g = 10 , i c = 50 a, l = 500 h, c snub = 330 nf, t j = 175 c, see figure 24 -520-
electrical characteristics STGW28IH125DF, stgwt28ih125df 6/17 docid025268 rev 2 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature figure 3. collector current vs. case temperature figure 4. output characteristics (t j = 25c) figure 5. output characteristics (t j = 175c) p tot 100 0 0 t c ( c ) (w) 100 200 50 150 300 v ge 15v, t j 175 c gipg300120140946fsr i c 20 10 0 0 t c ( c ) (a) 100 30 50 v ge 15v, t j 175 c 150 40 50 60 gipg300120140951fsr i c 20 0 0 1 v ce (v) (a) 4 40 2 3 v ge =15v 60 9v 11v 5 80 100 13v gipg300120140955fsr i c 20 0 0 1 v ce (v) (a) 4 40 2 3 v ge =15v 60 9v 11v 5 80 100 13v 7v gipg300120141005fsr figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current v ce(sat) 1.8 1.6 1.4 -50 t j ( c ) (v) 100 2 050 2.2 150 v ge = 15v i c = 50a i c = 25a i c = 12.5a 2.8 2.6 2.4 3.2 3 gipg300120141019fsr v ce(sat) 1.6 1.4 1.2 0 i c ( a ) (v) 30 1.8 10 20 2 40 2.2 v ge = 15v t j = -40 c t j = 25 c t j = 175 c 50 2.4 2.6 2.8 3.0 gipg300120141024fsr
docid025268 rev 2 7/17 STGW28IH125DF, stgwt28ih125df electrical characteristics figure 8. forward bias safe operating area figure 9. transfer characteristics c = 25c, t 175 c; v i c 10 1 0.1 1 v ce ( v ) (a) 10 10 s 100 s 1 ms single pulse tc= 25c, t j <= 175c v ge = 15v 100 1 s 100 1000 gipg300120141043fsr i c 20 0 6 v ge (v) (a) 10 8 40 t j =175c 60 t j =25c v ce =10v 12 80 100 gipg300120141054fsr figure 10. diode v f vs. forward current figure 11. normalized v ge(th) vs junction temperature v f 1.2 1.0 0.8 0.6 0 i f ( a ) (v) 20 t j = 175c 40 60 80 t j = 25c t j = -40c 100 2.0 1.8 1.6 1.4 2.4 2.2 gipg300120141110fsr v ge(th) 1.1 1.0 0.6 -50 t j ( c ) (norm) 0 50 100 150 i c = 1ma v ce = v ge 0.7 0.8 0.9 gipd281020131600fsr figure 12. normalized v (br)ces vs. junction temperature figure 13. capacitance variation v (br)ces 1.08 1.0 0.9 -50 t j ( c ) (norm) 0 50 100 150 i c = 2ma gipg300120141121fsr c 1 v ce (v) (pf) 0.1 1 10 c ies 10 100 c oes c res 100 1000 gipg300120141124fsr
electrical characteristics STGW28IH125DF, stgwt28ih125df 8/17 docid025268 rev 2 figure 14. gate charge vs. gate-emitter voltage figure 15. switching loss vs collector current v ge 8 0 q g (n c ) (v) 020 i c = 25a i ge = 1ma v cc = 960v 4 40 12 60 16 80 100 120 gipg300120141130fsr e off 0 i c (a) (j) 01020 500 30 40 1000 t j = 175 c 1500 v cc = 600v, v ge = 15v, r g = 10 50 2000 2500 t j = 25 c gipg300120141133fsr figure 16. switching loss vs gate resistance figure 17. switching loss vs temperature e off 400 r g () (j) 01020 600 800 1000 30 40 1200 v cc = 600 v, v ge = 15 v, i c = 25 a t j = 175 c t j = 25 c 1400 1600 1800 2000 2200 gipg300120141141fsr 600 t j ( c ) (j) 10 40 70 700 800 900 100 130 e off v cc = 600v, v ge = 15v, r g = 10, i c = 25a 1000 160 1100 1200 1300 1400 1600 gipg300120141158fsr figure 18. switching loss vs collector-emitter voltage figure 19. switching times vs. collector current 0 v ce ( v ) (j) 250 650 50 100 150 e off v ge = 15v, r g = 10, i c = 25a 200 250 450 850 t j = 175c t j = 25c gipg300120141206fsr t i c ( a ) (ns) 0 10 20 10 30 t f t j = 175c, v ge = 15v, r g = 10, v cc = 600v t doff 100 40 50 gipg300120141346fsr
docid025268 rev 2 9/17 STGW28IH125DF, stgwt28ih125df electrical characteristics figure 20. switching times vs. gate resistance t r g ( ) (ns) 01020 10 30 t f t j = 175c, v ge = 15v, i c = 25a, v cc = 600v 40 100 t doff gipg300120141353fsr
electrical characteristics STGW28IH125DF, stgwt28ih125df 10/17 docid025268 rev 2 figure 21. thermal impedance for igbt figure 22. thermal impedance for diode zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2
docid025268 rev 2 11/17 STGW28IH125DF, stgwt28ih125df test circuits 3 test circuits figure 23. test circuit for inductive load switching figure 24. test circuit for capacitive load switching figure 25. gate charge test circuit figure 26. switching waveform am01504v1 am17096v2 csnub am01505v1 am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10%
package mechanical data STGW28IH125DF, stgwt28ih125df 12/17 docid025268 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. figure 27. to-247 drawing 0075325_g
docid025268 rev 2 13/17 STGW28IH125DF, stgwt28ih125df package mechanical data table 8. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data STGW28IH125DF, stgwt28ih125df 14/17 docid025268 rev 2 figure 28. to-3p drawing 8045950_a
docid025268 rev 2 15/17 STGW28IH125DF, stgwt28ih125df package mechanical data table 9. to-3p mechanical data dim. mm min. typ. max. a4.60 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.90 e 15.40 15.80 e1 13.60 e2 9.60 e 5.15 5.45 5.75 l 19.50 20 20.50 l1 3.50 l2 18.20 18.40 18.60 ?p 3.10 3.30 q5 q1 3.80
revision history STGW28IH125DF, stgwt28ih125df 16/17 docid025268 rev 2 5 revision history table 10. document revision history date revision changes 20-jan-2014 1 initial release. 03-feb-2014 2 document status promoted form preliminary to production data. updated table 2: absolute maximum ratings , table 4: static characteristics , table 5: dynamic characteristics , table 6: igbt switching characteristics (inductive load) and table 7: igbt switching characteristics (capacitive load) . inserted section 2.1: electrical characteristics (curves) . minor text changes.
docid025268 rev 2 17/17 STGW28IH125DF, stgwt28ih125df please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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